Product Summary

The FQB46N15TM is an N-Channel enhancement mode power field effect transistor. The FQB46N15TM is produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQB46N15TM is well suited for low voltage applications such as audio amplifire, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply.

Parametrics

FQB46N15TM absolute maximum ratings: (1)VDSS Drain-Source Voltage: 150 V; (2)ID Drain Current - Continuous (TC = 25℃)- Continuous (TC = 100℃): 45.6 A, 32.2A; (3)Idm Drain Current - Pulsed: 182.4A; (4)VGSS Gate-Source Voltage: ±25 V; (5)mAS Single Pulsed Avalanche Energy: 650mJ; (6)| AR Avalanche Current: 45.6A; (7)R A m Repetitive Avalanche Energy: 21mJ; (8)dv/dt Peak Diode Recovery dv/dt: 6.0V/ns; (9)Pd Power Dissipation (TA = 25℃): 3.75W, Power Dissipation (Tc = 25℃)- Derate above 25℃: 210 W; (10)TJ tstg Operating and Storage Temperature Range: -55 to +175℃; (11)Tl Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300℃.

Features

FQB46N15TM features: (1)45.6A, 150V, RDS(on)= 0.042Q @VGS = 10 V Low gate charge (typical 85 nC); (2)Low Crss (typical 100 pF); (3)Fast switching; (4)100% avalanche tested; (5)Improved dv/dt capability; (6)175℃ maximum junction temperature rating.

Diagrams

FQB46N15TM pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FQB46N15TM
FQB46N15TM
Fairchild Semiconductor
MOSFET
Data Sheet
Negotiable 
FQB46N15TM_AM002
FQB46N15TM_AM002
Fairchild Semiconductor
MOSFET 150V N-Channel QFET
Data Sheet
Negotiable