(China (Mainland))
Product Summary
The 1SS221-T1B-A is a silicon switching diode.
Parametrics
1SS221-T1B-A absolute maximum ratings: (1)Peak Reverse Voltage Vrm: 70 to 100 V; (2)DC Reverse Voltage vr: 70 to 100 V; (3)Peak Forward Current Ifm: 300 mA; (4)Average Rectified Current Io: 100 mA; (5)DC Forward Current If: 100 mA; (6)Maximum Temperatures Junction Temperature Ti: 150 °C; (7)Storage Temperature Range Tstg: - 55 to +150°C.
Features
1SS221-T1B-A features: (1)Low capacitance: Ct = 4.0 pF MAX; (2)High speed switching: trr = 3.0 ns MAX; (3)Wide applications including switching, limitter, clipper.
Diagrams
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 1SS200 |
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1SS201 |
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1SS216 |
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1SS220 |
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1SS221 |
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1SS222 |
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