Product Summary

The 1SS221-T1B-A is a silicon switching diode.

Parametrics

1SS221-T1B-A absolute maximum ratings: (1)Peak Reverse Voltage Vrm: 70 to 100 V; (2)DC Reverse Voltage vr: 70 to 100 V; (3)Peak Forward Current Ifm: 300 mA; (4)Average Rectified Current Io: 100 mA; (5)DC Forward Current If: 100 mA; (6)Maximum Temperatures Junction Temperature Ti: 150 °C; (7)Storage Temperature Range Tstg: - 55 to +150°C.

Features

1SS221-T1B-A features: (1)Low capacitance: Ct = 4.0 pF MAX; (2)High speed switching: trr = 3.0 ns MAX; (3)Wide applications including switching, limitter, clipper.

Diagrams

1SS221-T1B-A pin connection

1SS222
1SS222

Other


Data Sheet

Negotiable 
1SS223
1SS223

Other


Data Sheet

Negotiable 
1SS226
1SS226

Other


Data Sheet

Negotiable 
1SS226T5LFT
1SS226T5LFT

Toshiba

Rectifiers Diode

Data Sheet

0-1: $0.25
1-10: $0.18
10-100: $0.14
100-250: $0.11
1SS226TE85LF
1SS226TE85LF

Toshiba

Rectifiers Diode

Data Sheet

Negotiable 
1SS238
1SS238

Other


Data Sheet

Negotiable