(China (Mainland))
Product Summary
The CY7C1069AV33-10ZXI is a high-performance CMOS Static RAM organized as 2,097,152 words by 8 bits. Writing to the CY7C1069AV33-10ZXI is accomplished by enabling the chip (by taking CE1 LOW and CE2 HIGH) and Write Enable (WE) inputs LOW. Reading from the CY7C1069AV33-10ZXI is accomplished by enabling the chip (CE1 LOW and CE2 HIGH) as well as forcing the Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH.
Parametrics
CY7C1069AV33-10ZXI absolute maximum ratings: (1)Storage Temperature: –65℃ to +150℃; (2)Ambient Temperature with Power Applied: –55℃ to +125℃; (3)Supply Voltage on VCC to Relative GND: –0.5V to +4.6V; (4)DC Voltage Applied to Outputs; (5)in High-Z State: –0.5V to VCC + 0.5V; (6)DC Input Voltage: –0.5V to VCC + 0.5V; (7)Current into Outputs (LOW): 20 mA.
Features
CY7C1069AV33-10ZXI features: (1)High speed — tAA = 10, 12 ns; (2)Low active power — 990 mW (max.); (3)Operating voltages of 3.3 ± 0.3V; (4)2.0V data retention; (5)Automatic power-down when deselected; (6)TTL-compatible inputs and outputs; (7)Easy memory expansion with CE1 and CE2 features; (8)Available in Pb-free and non Pb-free 54-pin TSOP II , non Pb-free 60-ball fine-pitch ball grid array (FBGA)package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 CY7C1069AV33-10ZXI |
Cypress Semiconductor |
SRAM 2M x 8 CPG IND Fast Async SRAM |
Data Sheet |
Negotiable |
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CY7C1069AV33-10ZXIT |
Cypress Semiconductor |
SRAM 2M x 8 CPG IND Fast Async SRAM |
Data Sheet |
Negotiable |
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