IRFI730GPBF

HEXFET Power MOSFET, 3.7A, 35W, 20 V, TO-220F

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Price:: US $0.55~0.60 / piece [Get Latest Price]

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	US $0.55~0.60

PartNumber:: IRFI730GPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2012-07-22

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Part Number:IRFI730GPBF
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Product Summary

The IRFI730GPBF is a HEXFET Power MOSFET. The IRFI730GPBF from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard T0-220 product. The IRFI730GPBF is mounted to a heatsink using a single clip or by a single screw fixing.

Parametrics

IRFI730GPBF absolute maximum ratings: (1) Tc=25℃ Continuous Drain Current, Vgs @ 10 V: 3.7A; (2)lD@ Tc= 100℃ Continuous Drain Current, Vgs @ 10 V: 2.3 A; (3)I DM Pulsed Drain Current: 15A; (4)Pd @ Tc = 25℃ Power Dissipation: 35W; (5)Vgs Gate-to-Source Voltage: ±20 V; (6)Eas Single Pulse Avalanche Energy: 200mJ; (7)Iah Avalanche Current: 3.7A; (8)Ear Repetitive Avalanche Energy: 3.5mJ; (9)dv/dt Peak Diode Recovery dv/dt: 4.0V/ns; (10)Tj Operating Junction: -55 to +150℃.

Features

IRFI730GPBF features: (1)Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune; (2)Gate drive supply range from 10 to 20V; (3)Undervoltage lockout; (4)3.3V, 5V and 15V input logic compatible; (5)Cross-conduction prevention logic; (6)Internally set deadtime; (7)High side output in phase with input; (8)Shut down input turns off both channels; (9)Matched propagation delay for both channels; (10)Also available LEAD-FREE.