Product Summary

The AOT430 is an N-Channel enhancement mode field effect transistor. The AOT430 uses advanced trench technology and design to provide excellent RDS (on) with low gate charge. The AOT430 is suitable for use in PWM, load switching and general purpose applications.

Parametrics

AOT430 absolute maximum ratings: (1) Drain-Source Voltage VDS: 75V; (2) Gate-Source Voltage VGS: ±25V; (3) Continuous Drain Current ID: 80A (Tc=25°C) , 78A (Tc=100°C) ; (4) Pulsed Drain Current IDM: 200A; (5) Avalanche Current IAR: 45A; (6) Repetitive avalanche energy L=0.3mH EAR: 300mJ; (7) Power Dissipation: 268W (Tc=25°C) , 134W (Tc=100°C) ; (8) Junction and Storage Temperature Range: -55 to 175°C.

Features

AOT430 features: (1) VDS (V)=75V; (2) ID=80A (VGS=10V) ; (3) RDS (0N) < 11.5mΩ (VGS=10V) .

Diagrams

AOT430 Circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AOT430
AOT430

MOSFET N-CH 75V 80A TO-220
Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AOT400
AOT400
Other

Data Sheet
Negotiable 
AOT402
AOT402
Other

Data Sheet
Negotiable 
AOT404
AOT404

MOSFET N-CH 105V 40A TO-220
Data Sheet
Negotiable 
AOT410L
AOT410L

MOSFET N-CH 100V 150A TO-220
Data Sheet
0-1: $1.40
1-25: $1.13
25-100: $1.01
100-250: $0.90
250-500: $0.79
500-1000: $0.65
1000-2500: $0.61
2500-5000: $0.59
5000-10000: $0.56
AOT412
AOT412

MOSFET N-CH 100V 60A TO-220
Data Sheet
0-1: $1.01
1-25: $0.81
25-100: $0.71
100-250: $0.62
250-500: $0.55
500-1000: $0.43
1000-2500: $0.40
2500-5000: $0.38
5000-10000: $0.37
AOT414
AOT414

MOSFET N-CH 100V 43A TO-220
Data Sheet
0-1: $0.64
1-25: $0.51
25-100: $0.45
100-250: $0.39
250-500: $0.35
500-1000: $0.27
1000-2500: $0.26
2500-5000: $0.24
5000-10000: $0.23