Product Summary

The AOT430 is an N-Channel enhancement mode field effect transistor. The AOT430 uses advanced trench technology and design to provide excellent RDS (on) with low gate charge. The AOT430 is suitable for use in PWM, load switching and general purpose applications.

Parametrics

AOT430 absolute maximum ratings: (1) Drain-Source Voltage VDS: 75V; (2) Gate-Source Voltage VGS: ±25V; (3) Continuous Drain Current ID: 80A (Tc=25°C) , 78A (Tc=100°C) ; (4) Pulsed Drain Current IDM: 200A; (5) Avalanche Current IAR: 45A; (6) Repetitive avalanche energy L=0.3mH EAR: 300mJ; (7) Power Dissipation: 268W (Tc=25°C) , 134W (Tc=100°C) ; (8) Junction and Storage Temperature Range: -55 to 175°C.

Features

AOT430 features: (1) VDS (V)=75V; (2) ID=80A (VGS=10V) ; (3) RDS (0N) < 11.5mΩ (VGS=10V) .

Diagrams

AOT430 Circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AOT430
AOT430

MOSFET N-CH 75V 80A TO-220
Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AOT400
AOT400
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Data Sheet
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Data Sheet
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AOT416
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MOSFET N-CH 100V 42A TO-220
Data Sheet
0-1: $0.58
1-25: $0.45
25-100: $0.39
100-250: $0.34
250-500: $0.29
500-1000: $0.23
1000-2500: $0.21
2500-5000: $0.19
5000-10000: $0.19
AOT418L
AOT418L

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Data Sheet
0-1000: $0.60
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Data Sheet
0-1000: $0.34
AOT426
AOT426
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Data Sheet
Negotiable