(China (Mainland))
Product Summary
The BFP196E6327 is an NPN Silicon RF Transistor.
Parametrics
BFP196E6327 absolute maximum ratings: (1)Collector-emitter voltage VCEO: 12 V; (2)Collector-emitter voltage VCES: 20V; (3)Collector-base voltage VCBO: 20V; (4)Emitter-base voltage VEBO: 2V; (5)Collector current IC: 100 mA; (6)Base current IB: 12mA; (7)Total power dissipation TS ≦ 77 ℃ Ptot: 700 mW; (8)Junction temperature T j: 150 ℃; (9)Ambient temperature TA: - 65 to + 150℃; (10)Storage temperature Tstg - 65 to + 150℃.
Features
BFP196E6327 features: (1)For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA; (2)Power amplifier for DECT and PCN systems; (3)fT = 7.5GHz F = 1.5 dB at 900MHz.
Diagrams
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