(China (Mainland))
Product Summary
The HM5225165BTT-B6 is a 256-Mbit SDRAM organized as 4194304-word × 16-bit × 4 bank. The HM5225165BTT-B6 is a 256-Mbit SDRAM organized as 8388608-word × 8-bit × 4 bank. The HM5225165BTT-B6 is a 256-Mbit SDRAM organized as 16777216-word × 4-bit × 4 bank. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP II.
Parametrics
HM5225165BTT-B6 absolute maximum ratings: (1)Voltage on any pin relative to VSS VT: –0.5 to VCC + 0.5 (≤ 4.6 (max))V; (2)Supply voltage relative to VSS VCC: –0.5 to +4.6 V; (3)Short circuit output current Iout: 50 mA; (4)Power dissipation PT: 1.0 W; (5)Operating temperature Topr: 0 to +70 ℃; (6)Storage temperature Tstg: –55 to +125 ℃.
Features
HM5225165BTT-B6 features: (1)3.3 V power supply; (2)Clock frequency: 133 MHz/100 MHz (max); (3)LVTTL interface; (4)Single pulsed RAS; (5)4 banks can operate simultaneously and independently; (6)Burst read/write operation and burst read/single write operation capability; (7)Programmable burst length: 1/2/4/8; (8)2 variations of burst sequence Sequential (BL = 1/2/4/8), Interleave (BL = 1/2/4/8); (9)Programmable CAS latency: 2/3.
Diagrams
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