(China (Mainland))
Product Summary
The K9F8G08UOM-PCB0 is a 1M(1,048,576)x8bit NAND Flash Memory with a spare 32K(32,768)x8bit. NAND cell of the K9F8G08UOM-PCB0 provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 264-byte page in typically 250ms and an erase operation can be performed in typically 2ms on a 4K-byte block.
Parametrics
K9F8G08UOM-PCB0 absolute maximum ratings: (1)Voltage on any pin relative to VSS VIN: -0.6 to +7.0 V; (2)Temperature Under Bias TBIAS: -10 to +125 ℃; (3)Storage Temperature TSTG: -65 to +150 ℃; (4)Short Circuit Output Current IOS: 5 mA.
Features
K9F8G08UOM-PCB0 features: (1)Voltage supply : 2.7V ~ 5.5V; (2)Organization - Memory Cell Array : (1M + 32K)bit x 8bit - Data Register : (256 + 8)bit x8bit; (3)Automatic Program and Erase(Typical)- Page Program : (256 + 8)Byte in 250ms - Block Erase : (4K + 128)Byte in 2ms - Status Register; (4)264-Byte Page Read Operation - Random Access : 10ms(Max.)- Serial Page Access : 80ns(Min.); (5)System Performance Enhancement - Ready/ Busy Status Output; (6)Command/Address/Data Multiplexed I/O port; (7)Hardware Data Protection - Program/Erase Lockout During Power Transitions; (8)Reliable CMOS Floating-Gate Technology - Endurance : 1M Program/Erase Cycles - Data Retention : 10 years; (9)Command Register Operation; (10)44(40)- Lead TSOP Type II (400mil / 0.8 mm pitch).
Diagrams
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K9F8008W0M-TIB0 |
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