Product Summary

The SI2301CDS-T1-GE3 is a P-Channel 20-V (D-S) MOSFET.

Parametrics

SI2301CDS-T1-GE3 absolute maximum ratings: (1)Drain-Source Voltage VDS: - 20 V; (2)Gate-Source Voltage VGS: ± 8V; (3)Pulsed Drain Current IDM: - 10A; (4)Maximum Power Dissipation: 1.6W; (5)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to 150 ℃.

Features

SI2301CDS-T1-GE3 features: (1)Halogen-free Option Available; (2)TrenchFET Power MOSFET.

Diagrams

SI2301CDS-T1-GE3 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI2301CDS-T1-GE3
SI2301CDS-T1-GE3
Vishay/Siliconix
MOSFET 20V 3.1A 1.6W 112 mohms @ 4.5V
Data Sheet
0-1: $0.28
1-10: $0.18
10-100: $0.17
100-250: $0.15
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI2301ADS-T1
SI2301ADS-T1
Vishay/Siliconix
MOSFET 20V 2.0A 0.9W
Data Sheet
Negotiable 
SI2301BDS-T1-GE3
SI2301BDS-T1-GE3
Vishay/Siliconix
MOSFET 20V 2.4A 0.9W 100mohm @ 4.5V
Data Sheet
0-1: $0.34
1-10: $0.20
10-100: $0.16
100-250: $0.12
Si2301CDS-T1-E3
Si2301CDS-T1-E3
Vishay/Siliconix
MOSFET 20V 3.1A 1.6W 112mohm @ 4.5V
Data Sheet
0-1: $0.09
1-10: $0.08
10-100: $0.08
100-250: $0.08
SI2301CDS-T1-GE3
SI2301CDS-T1-GE3
Vishay/Siliconix
MOSFET 20V 3.1A 1.6W 112 mohms @ 4.5V
Data Sheet
0-1: $0.28
1-10: $0.18
10-100: $0.17
100-250: $0.15
SI2302ADS-T1-E3
SI2302ADS-T1-E3
Vishay/Siliconix
MOSFET 20V 2.4A 0.06Ohm
Data Sheet
Negotiable 
SI2303BDS-T1-GE3
SI2303BDS-T1-GE3
Vishay/Siliconix
MOSFET 30V 1.64A 0.9W 200mohm @ 10V
Data Sheet
0-1: $0.36
1-10: $0.24
10-100: $0.19
100-250: $0.16