(China (Mainland))
Product Summary
The SI2301CDS-T1-GE3 is a P-Channel 20-V (D-S) MOSFET.
Parametrics
SI2301CDS-T1-GE3 absolute maximum ratings: (1)Drain-Source Voltage VDS: - 20 V; (2)Gate-Source Voltage VGS: ± 8V; (3)Pulsed Drain Current IDM: - 10A; (4)Maximum Power Dissipation: 1.6W; (5)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to 150 ℃.
Features
SI2301CDS-T1-GE3 features: (1)Halogen-free Option Available; (2)TrenchFET Power MOSFET.
Diagrams
| Image | Part No | Mfg | Description |  |
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 SI2301CDS-T1-GE3 |
Vishay/Siliconix |
MOSFET 20V 3.1A 1.6W 112 mohms @ 4.5V |
Data Sheet |
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SI2300 |
Other |
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Data Sheet |
Negotiable |
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SI2300DS-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 3.6A N-CH MOSFET |
Data Sheet |
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SI2301 |
Micro Commercial Components (MCC) |
MOSFET -20V -2.8A |
Data Sheet |
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Si2301ADS |
Other |
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Data Sheet |
Negotiable |
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SI2301ADS-T1 |
Vishay/Siliconix |
MOSFET 20V 2.0A 0.9W |
Data Sheet |
Negotiable |
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SI2301ADS-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 2.0A 0.9W |
Data Sheet |
Negotiable |
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