Product Summary

The SI2301CDS-T1-GE3 is a P-Channel 20-V (D-S) MOSFET.

Parametrics

SI2301CDS-T1-GE3 absolute maximum ratings: (1)Drain-Source Voltage VDS: - 20 V; (2)Gate-Source Voltage VGS: ± 8V; (3)Pulsed Drain Current IDM: - 10A; (4)Maximum Power Dissipation: 1.6W; (5)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to 150 ℃.

Features

SI2301CDS-T1-GE3 features: (1)Halogen-free Option Available; (2)TrenchFET Power MOSFET.

Diagrams

SI2301CDS-T1-GE3 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SI2301CDS-T1-GE3
SI2301CDS-T1-GE3

Vishay/Siliconix

MOSFET 20V 3.1A 1.6W 112 mohms @ 4.5V

Data Sheet

0-1: $0.28
1-10: $0.18
10-100: $0.17
100-250: $0.15
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SI2300
SI2300

Other


Data Sheet

Negotiable 
SI2300DS-T1-GE3
SI2300DS-T1-GE3

Vishay/Siliconix

MOSFET 30V 3.6A N-CH MOSFET

Data Sheet

0-1: $0.29
1-25: $0.20
25-100: $0.17
100-250: $0.14
SI2301
SI2301

Micro Commercial Components (MCC)

MOSFET -20V -2.8A

Data Sheet

0-3000: $0.16
3000-6000: $0.14
6000-15000: $0.13
Si2301ADS
Si2301ADS

Other


Data Sheet

Negotiable 
SI2301ADS-T1
SI2301ADS-T1

Vishay/Siliconix

MOSFET 20V 2.0A 0.9W

Data Sheet

Negotiable 
SI2301ADS-T1-E3
SI2301ADS-T1-E3

Vishay/Siliconix

MOSFET 20V 2.0A 0.9W

Data Sheet

Negotiable