(China (Mainland))
Product Summary
Offered in 512Mx8bit, the K9G8G08U0A-PIB0 is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 800μs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block. Data in the data register can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9G8G08U0A-PIB0 extended reliability of 5K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9G8G08U0A-PIB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
Parametrics
K9G8G08U0A-PIB0 absolute maximum ratings: : (1)Voltage on any pin relative to VSS: VCC -0.6 to + 4.6 VIN -0.6 to + 4.6 V VI/O -0.6 to Vcc+0.3 (<4.6V); (2)Temperature Under Bias: -10 to +125 ℃; (3)Storage Temperature: -65 to +150 ℃; (4)Short Circuit Current Ios: 5 mA.
Features
K9G8G08U0A-PIB0 features: (1)Voltage Supply - 2.7V Device(K9G4G08B0A): 2.5V ~ 2.9V - 3.3V Device(K9G4G08U0A): 2.7V ~ 3.6V Organization - Memory Cell Array : (512M + 16M)x 8bit - Data Register : (2K + 64)x 8bit; (2)Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte; (3)Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60μs(Max.)- Serial Access : 30ns(Min.); (4)Memory Cell : 2bit / Memory Cell.
Diagrams
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Data Sheet |
Negotiable |
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