(China (Mainland))
Product Summary
The SI4427BDY-T1-E3 is a P-Channel 30-V (D-S) MOSFET.
Parametrics
SI4427BDY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: -30 V; (2)Gate-Source Voltage VGS: 12V; (3)Pulsed Drain Current IDM: -50A; (4)continuous Source Current (Diode Conduction)a IS: -2.5A; (5)Maximum Power Dissipationa TA = 25C PD: 2.5 W; (6)Operating Junction and Storage Temperature Range TJ, Tstg: -55 to 150℃.
Features
SI4427BDY-T1-E3 features: (1)TrenchFET Power MOSFETS.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SI4427BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 13.3A 3W |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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Si4401BDY |
Other |
|
Data Sheet |
Negotiable |
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SI4401BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 0.014Ohm |
Data Sheet |
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SI4401DY |
Vishay/Siliconix |
MOSFET 40V 10.5A 3W |
Data Sheet |
Negotiable |
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SI4401DY-T1-E3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 3W |
Data Sheet |
Negotiable |
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SI4401DY-T1-GE3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 3.0W 15.5mohm @ 10V |
Data Sheet |
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Si4403BDY |
Other |
|
Data Sheet |
Negotiable |
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