Product Summary
The SPW20N60C3 is a cool MOS power transistor.
Parametrics
SPW20N60C3 absolute maximum ratings: (1)Continuous drain current TC =25℃ TC = 100 ℃ ID: 20.7A; (2)Pulsed drain current, tp limited by Timax ID puls: 62.1A; (3)Avalanche energy, single pulse /D= 10A, VDD = 50V eas: 690 mJ; (4)Avalanche energy, repetitive fAR limited by Tjmax1 /D = 20 A, VDD = 50V ear: 1mJ; (5)Avalanche current, repetitive fAR limited by Tjmax IAR: 20 A; (6)Reverse diode dv/dt dv/dt: 15 V/ns; (7)Gate source voltage static VGS: ±20 V; (8)Gate source voltage AC(f>1Hz)VGS: ±30V; (9)Power dissipation, 7q = 25℃ Ptot: 208 w; (10)Operating and storage temperature Ti > 7stg: -55 to +150 ℃.
Features
SPW20N60C3 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)High peak current capability; (6)Improved transconductance.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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SPW20N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V 20.7A |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
SPW20N60C2 |
Infineon Technologies |
MOSFET N-CH 600V 20A TO-247 |
Data Sheet |
Negotiable |
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SPW20N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V 20.7A |
Data Sheet |
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SPW20N60CFD |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V 20.7A |
Data Sheet |
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SPW20N60S5 |
Infineon Technologies |
MOSFET COOL MOS N-CH 600V 20A |
Data Sheet |
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SPW21N50C3 |
Infineon Technologies |
MOSFET COOL MOS PWR TRANS 560V 21A |
Data Sheet |
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SPW24N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V 24.3A |
Data Sheet |
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