(China (Mainland))
Product Summary
The NDC7001C is a dual N & P-channel enhancement mode field effect transistor. The NDC7001C is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The NDC7001C is particularly suited for low voltage, low current, switching, and power supply applications.
Parametrics
NDC7001C absolute maximum ratings: (1)VDSS Drain-Source Voltage: 50V; (2)VGSS Gate-Source Voltage - Continuous: 20V; (3)ID Drain Current - Continuous: 0.51A; (4)PD Maximum Power Dissipation: 0.96 W; (5)TJ,TSTG Operating and Storage Temperature Range: -55 to 150 ℃.
Features
NDC7001C features: (1)N-Channel 0.51A, 50V, RDS(ON)= 2W @ VGS=10V; (2)P-Channel -0.34A, -50V. RDS(ON)= 5W @ VGS=-10V; (3)High density cell design for low RDS(ON); (4)Proprietary SuperSOTTM-6 package design using copper; (5)lead frame for superior thermal and electrical capabilities; (6)High saturation current.
Diagrams
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 NDC7001C |
Fairchild Semiconductor |
MOSFET Dual N/P Channel FET Enhancement Mode |
Data Sheet |
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NDC7001C_Q |
Fairchild Semiconductor |
MOSFET Dual N/P Channel FET Enhancement Mode |
Data Sheet |
Negotiable |
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